PULSE PROGRAMMING TECHNIQUES FOR VOLTAGE-CONTROLLED MAGNETORESISTIVE TUNNEL JUNCTION (MTJ)
Patent №
US 9,728,240
Granted
2017-08-08
Filed 2014
Owner
—
Lab
—
AI components
1
hardware
Assignment
None on record
Dataset
AIPD
2023_r1 edition
Application
14214064
A method of programming a voltage-controlled magnetoresistive tunnel junction (MTJ) includes applying a programming voltage pulse (Vp), reading the voltage-controlled MTJ, and determining if the voltage-controlled MTJ is programmed to a desired state and if not, changing the Vp and repeating the applying and reading steps until the voltage-controlled MTJ is programmed to the desired state.
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