PULSE PROGRAMMING TECHNIQUES FOR VOLTAGE-CONTROLLED MAGNETORESISTIVE TUNNEL JUNCTION (MTJ)

Patent №

US 9,728,240

Granted

2017-08-08

Filed 2014

Owner

Lab

AI components

1

hardware

Assignment

None on record

Dataset

AIPD

2023_r1 edition

Application

14214064

A method of programming a voltage-controlled magnetoresistive tunnel junction (MTJ) includes applying a programming voltage pulse (Vp), reading the voltage-controlled MTJ, and determining if the voltage-controlled MTJ is programmed to a desired state and if not, changing the Vp and repeating the applying and reading steps until the voltage-controlled MTJ is programmed to the desired state.

AI hardwareG11C 11/1675G11C 11/1677

AI classification

AI hardware1.00
Natural language0.02
Machine learning0.00
Speech0.00
Evolutionary computation0.00
Knowledge representation0.00
Vision0.00
Planning0.00
© 2026 NYSGPT2525 LLC