MAGNETORESISTIVE ELEMENT, SPIN MOSFET, MAGNETIC SENSOR, AND MAGNETIC HEAD

Spin-transport elements using semiconductors have had the problem of higher element resistance than conventional GMR elements and TMR elements, making it difficult to obtain high magnetoresistance ratios. A magnetoresistive element including a semiconductor channel layer; a first ferromagnetic layer disposed on the semiconductor channel layer; a second ferromagnetic layer disposed away from the first ferromagnetic layer; and a non-magnetic first reference electrode disposed away from the first ferromagnetic layer and the second ferromagnetic layer, wherein current is input from the second ferromagnetic layer to the first ferromagnetic layer through the semiconductor channel layer, a voltage between the second ferromagnetic layer and the first reference electrode is output.