One-Time Programming Device and a Semiconductor Device

A one-time programming device includes a field effect semiconductor transistor with a gate or a channel region of the field effect semiconductor transistor including a shape of a footprint so that in an on-state of the field effect semiconductor transistor a critical electrical field is reached within an area of the channel region, a bulk region or a drain region of the field effect semiconductor transistor due to the shape of the footprint resulting in a damage of a p-n junction between the channel region or the bulk region and the drain region of the field effect semiconductor transistor or resulting in a damage of a gate insulation of the field effect semiconductor transistor after a predetermined programming time.