PHOTOVOLTAIC CELL

Patent №

US RE45872

Granted

2016-01-26

Filed 2012

Owner

Lab

AI components

1

hardware

Assignment

None on record

Dataset

AIPD

2023_r1 edition

Application

13592613

In a photovoltaic cell, an i-type amorphous silicon film and an n-type amorphous silicon film are formed in a region excluding a predetermined width of an outer periphery on a main surface of an n-type single crystalline silicon substrate. A front electrode is formed so as to cover the i-type amorphous silicon film and the n-type amorphous silicon film on a main surface of the n-type single crystalline silicon substrate. An i-type amorphous silicon film and a p-type amorphous silicon film are formed on the entire area of a back surface of the n-type single crystalline silicon substrate. A back electrode is formed in a region excluding a predetermined width of an outer periphery on the p-type amorphous silicon film. A surface, on the side of the front electrode, of the photovoltaic cell is a primary light incidence surface.

AI classification

AI hardware0.73
Natural language0.02
Vision0.00
Machine learning0.00
Speech0.00
Evolutionary computation0.00
Knowledge representation0.00
Planning0.00
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