Towards Fast and Direct Memory Read-out by Multi-beam Scanning Electron Microscopy and Deep Learning Image Classification
EEPROM (Electrically Erasable Programmable Read-Only Memory) is one type of non-volatile memory which is widely used in microcontrollers and computers. This kind of memory consists of arrays of memory transistors which can be set to two different states. Either electrically charged or uncharged, they represent the two values of a binary digit – a bit (1/0). Imaged by a scanning electron microscope, electrically charged and not-charged transistors generate different image signals, based on passive voltage contrast [1]. This contrast mechanism was previously described as a valid tactic to image memory content from an EEPROM by single beam SEM [2].
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Towards Fast and Direct Memory Read-out by Multi-beam Scanning Electron Microscopy and Deep Learning Image Classification
Semantic Scholar · Computer Science · 2019
Abstract
EEPROM (Electrically Erasable Programmable Read-Only Memory) is one type of non-volatile memory which is widely used in microcontrollers and computers. This kind of memory consists of arrays of memory transistors which can be set to two different states. Either electrically charged or uncharged, they represent the two values of a binary digit – a bit (1/0). Imaged by a scanning electron microscope, electrically charged and not-charged transistors generate different image signals, based on passive voltage contrast [1]. This contrast mechanism was previously described as a valid tactic to image memory content from an EEPROM by single beam SEM [2].