Patent №
US 10,074,801
Granted
2018-09-11
Filed 2017
Owner
SK HYNIX INC.
Lab
—
AI components
1
hardware
Assignment
Recorded
Dataset
AIPD
2023_r1 edition
Application
15433981
A resistive random access memory device is provided. The resistive random access memory device includes a first electrode, a second electrode, and an electrolyte layer disposed between the first electrode and the second electrode. One of the first electrode and the second electrode includes an ion supply layer providing two or more kinds of metal ions to the electrolyte layer. The two or more kinds of metal ions have different mobilities in the electrolyte layer. Two or more conductive bridges are generated by the two or more kinds of metal ions, respectively.
AI classification
Ownership
SK HYNIX INC.
assignment · 412820181
Assignors
KIM, HYUNG WOO, HA, TAE JUNG
On an employer assignment, the assignors are typically the inventors.