Patent US 4,139,911

Patent №

US 4,139,911

Granted

Owner

Lab

AI components

1

hardware

Assignment

None on record

Dataset

AIPD

2023_r1 edition

Application

05886027

A high speed sensing circuit is described incorporating a number of field effect transistors for sensing, amplifying and storing a signal indicative of the polarity of the difference voltage across two load elements. The load elements may be a pair of variable threshold transistors.

AI classification

AI hardware0.99
Machine learning0.00
Natural language0.00
Evolutionary computation0.00
Knowledge representation0.00
Vision0.00
Planning0.00
Speech0.00
© 2026 NYSGPT2525 LLC