Patent US 4,139,909

An optoelectronic memory comprising the following elements placed one after another in succession downstream the original beam from the source of electromagnetic radiation: a means for scanning the original beam, which is electrically connected to an address register, a means for splitting the original beam into m beams forming a scan pattern and a focusing lens. The focusing lens is followed by n beam splitters whose number along each beam direction is equal. The memory also comprises .vertline.n+1.vertline. information memory plates each being positioned at a focal distance from the focusing lens and carrying m memory modules arranged upon the surface facing the beam. The memory modules are made as multilayer structures comprising the following elements placed downstream the beam: a transparent electrode electrically connected to the output of an information recording register, layers of at least two dielectrics and a semiconductor and an electrode electrically connected to the input of the information readout register.