ASSOCIATIVE MEMORY WITH IMPROVED MEMORY CELL AND METHOD FOR OPERATING SAME

An improved memory cell for use in an associative memory has a RAM cell having two output terminals respectively connected to a bit line and a complementary bit line through transistors having respective control electrodes connected to a word line. The outputs of the RAM cell are also cross-connected to the control electrodes of further transistors respectively connected to the bit lines and having a common terminal connected to the controlled electrode of a transistor which determines the state of a hit line. When the word line is activated, information occurring on the bit line is written into the RAM cell. If the word line is non-activated, information supplied by the bit line is compared to information currently stored in the RAM cell and the result of the comparison is utilized to determine the state of the hit line.