MOS PULL- UP OR PULL- DOWN LOGIC CIRCUIT HAVING EQUALIZED DISCHARGE TIME DELAYS AND LAYOUT AVDIDING CROSS OVERS
Patent №
US 4,716,308
Granted
1987-12-29
Filed 1983
Owner
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA
Lab
—
AI components
1
hardware
Assignment
Recorded
Dataset
AIPD
2023_r1 edition
Application
06518751
A MOS logic circuit comprises two P channel MOSFETs connected in parallel between a positive power source V.sub.DD and a logic signal output terminal and two series circuits connected in parallel between a ground voltage source V.sub.SS and the terminal, each series circuit being comprised of serially connected two N channel MOSFETs. The gate electrodes of the MOSFETs located in the corresponding positions in the respective series circuits are connected to first and second logic signal input terminals, respectively. Similarly, the gate electrodes of the other MOSFETs located in the corresponding positions in the respective series circuits are connected to the second and first logic signal input terminals, respectively.
AI classification
Ownership
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA
assignment · 41600014
Assignors
MATSUO, KENJI, SASAKI, ITSUO, SUZUKI, HIROAKI, KUNIEDA, MITSUYUKI
On an employer assignment, the assignors are typically the inventors.