SELECTIVE NIPI DOPING SUPER LATTICE CONTACTS AND OTHER SEMICONDUCTOR DEVICE STRUCTURES FORMED BY SHADOW MASKING FABRICATION
Patent №
US 4,883,770
Granted
1989-11-28
Filed 1989
Owner
MERCK FROSST CANADA, INC., A CORP. OF THE PROVINCE OF QUEBEC, CANADA
+1 more
Lab
—
AI components
1
hardware
Assignment
Recorded
Dataset
AIPD
2023_r1 edition
Application
07298794
A molecular beam epitaxy (MBE) process in which some portions of the substrate are shadowed by a shadow mask from receiving at least one of the molecular beams used in the MBE process. This process is capable of producing NIPI superlattices that have selective contacts that are far superior to those which can be produced at present. This technique can also produce a wide variety of NIPI devices as well as other types of IC structures.
AI classification
Ownership
MERCK FROSST CANADA, INC., A CORP. OF THE PROVINCE OF QUEBEC, CANADA
assignment · 50770975
HEWLETT-PACKARD COMPANY, A CA. CORP.
assignment · 50770975
Assignors
DOHLER, GOTTFRIED H.
On an employer assignment, the assignors are typically the inventors.