PROCESS FOR FABRICATING A DEVICE IN WHICH THE PROCESS IS CONTROLLED BY NEAR-FIELD IMAGING LATENT FEATURES INTRODUCED INTO ENERGY SENSITIVE RESIST MATERIALS

The present invention is directed to a process for device fabrication in which a spatially resolved latent image of latent features in an energy sensitive resist material is used to control process parameters. In the present process, an energy sensitive resist material is exposed to radiation using a patternwise or blanket exposure. An image of the latent effects of the exposure is obtained using a near-field imaging technique. This image of the latent effects of the exposure is used to control parameters of the lithographic process such as focus, lamp intensity, exposure dose, exposure time, and post exposure baking by comparing the image so obtained with the desired effects of the exposure and adjusting the relevant lithographic parameter to obtain the desired correlation between the image obtained and the desired effect. The image of the latent effects of exposure are also used to characterize the mask used in the lithographic process or to characterize the lithographic stepper used in the lithographic process.