SECOND-LAYER PHASE CHANGE MEMORY ARRAY ON TOP OF A LOGIC DEVICE

Patent №

US 5,714,768

Granted

1998-02-03

Filed 1995

Owner

ENERGY CONVERSION DEVICES, INC.

+1 more

Lab

—

AI components

hardware

Assignment

Recorded

Dataset

AIPD

2023_r1 edition

Application

08547349

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The present invention is a computational unit comprising a logic processing device, and a memory array deposited on top of and communicating with the logic processing device. More specifically, the present invention is a computational unit comprising a logic processing device, and electrically erasable phase change memory deposited on top of and communicating with the logic processing device.

AI hardwareH01L 21/34H10P 10/00G11C 11/56G11C 11/5678G11C 13/0004H10B 63/10H10B 63/20H10B 63/80+7 more

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AI classification

AI hardware0.98

Evolutionary computation0.00

Natural language0.00

Machine learning0.00

Planning0.00

Speech0.00

Vision0.00

Knowledge representation0.00

Ownership

ENERGY CONVERSION DEVICES, INC.

assignment · 77720285

OVONYX MEMORY TECHNOLOGY, LLC

namechg · 393790077

Assignors

OVSHINSKY, STANFORD R., WICKER, GUY C.

On an employer assignment, the assignors are typically the inventors.

From the same owner

MULTI-FUNCTIONAL CHALCOGENIDE ELECTRONIC DEVICES HAVING GAINUS 7,754,603 · 2010 MULTI-FUNCTIONAL CHALCOGENIDE ELECTRONIC DEVICES HAVING GAINUS 7,547,906 · 2009 METHOD OF OPERATING A MULTI-TERMINAL ELECTRONIC DEVICEUS 7,529,123 · 2009 MULTI-TERMINAL DEVICE HAVING LOGIC FUNCTIONALUS 7,186,998 · 2007 ERROR REDUCTION CIRCUIT FOR CHALCOGENIDE DEVICESUS 7,186,999 · 2007 ANALOG NEURONS AND NEUROSYNAPTIC NETWORKSUS 6,999,953 · 2006 FIELD EFFECT CHALCOGENIDE DEVICESUS 6,969,867 · 2005 MULTI-TERMINAL CHALCOGENIDE SWITCHING DEVICESUS 6,967,344 · 2005

Cited by (68)

AREA-EFFICIENT, RECONFIGURABLE, ENERGY-EFFICIENT, SPEED-EFFICIENT NEURAL NETWORK SUBSTRATEUS 11,295,204 · 2022 APPARATUSES INCLUDING ELECTRODES HAVING A CONDUCTIVE BARRIER MATERIAL AND METHODS OF FORMING SAMEUS 10,957,855 · 2021 APPARATUSES INCLUDING ELECTRODES HAVING A CONDUCTIVE BARRIER MATERIAL AND METHODS OF FORMING SAMEUS 10,950,791 · 2021 VARIABLE RESISTANCE MEMORY DEVICESUS 10,468,594 · 2019 APPARATUSES INCLUDING ELECTRODES HAVING A CONDUCTIVE BARRIER MATERIAL AND METHODS OF FORMING SAMEUS 10,217,936 · 2019 APPARATUSES INCLUDING ELECTRODES HAVING A CONDUCTIVE BARRIER MATERIAL AND METHODS OF FORMING SAMEUS 10,062,844 · 2018 APPARATUSES INCLUDING ELECTRODES HAVING A CONDUCTIVE BARRIER MATERIAL AND METHODS OF FORMING SAMEUS 9,166,158 · 2015 MEMORY DEVICE WITH LOW RESET CURRENTUS 9,000,408 · 2015 METHOD AND APPARATUS PROVIDING A CROSS-POINT MEMORY ARRAY USING A VARIABLE RESISTANCE MEMORY CELL AND CAPACITANCEUS 8,611,136 · 2013 CONTINUOUSLY VARIABLE RESISTORUS 8,467,236 · 2013 SEMICONDUCTOR DEVICE INCLUDING A MEMORY ELEMENTUS 8,193,606 · 2012 METHOD AND APPARATUS PROVIDING A CROSS-POINT MEMORY ARRAY USING A VARIABLE RESISTANCE MEMORY CELL AND CAPACITANCEUS 8,189,366 · 2012 PCRAM DEVICE WITH SWITCHING GLASS LAYERUS 7,994,491 · 2011 METHOD AND APPARATUS PROVIDING A CROSS-POINT MEMORY ARRAY USING A VARIABLE RESISTANCE MEMORY CELL AND CAPACITANCEUS 7,978,500 · 2011 THIN FILM LOGIC DEVICE AND SYSTEMUS 7,978,506 · 2011 MEMORY ARRAY FOR INCREASED BIT DENSITY AND METHOD OF FORMING THE SAMEUS 7,968,927 · 2011 MULTI-TERMINAL CHALCOGENIDE LOGIC CIRCUITSUS 7,969,769 · 2011 SOFTWARE REFRESHED MEMORY DEVICE AND METHODUS 7,944,768 · 2011 COMPOSITE CHALCOGENIDE MATERIALS AND DEVICESUS 7,935,951 · 2011 CONTINUOUS FLOW INSTANT LOGIC BINARY CIRCUITRY ACTIVELY STRUCTURED BY CODE-GENERATED PASS TRANSISTOR INTERCONNECTSUS 7,895,560 · 2011 SOFTWARE REFRESHED MEMORY DEVICE AND METHODUS 7,768,861 · 2010 PCRAM DEVICE WITH SWITCHING GLASS LAYERUS 7,759,665 · 2010 METHOD OF FORMING A VARIABLE RESISTANCE MEMORY DEVICE COMPRISING TIN SELENIDEUS 7,749,853 · 2010 RESISTANCE CHANGE MEMORY DEVICEUS 7,729,158 · 2010 METHODS OF FORMING MEMORY ARRAYS FOR INCREASED BIT DENSITYUS 7,700,422 · 2010

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