PCRAM DEVICE WITH SWITCHING GLASS LAYER

Patent №

US 7,994,491

Granted

2011-08-09

Filed 2007

Owner

—

Lab

—

AI components

hardware

Assignment

None on record

Dataset

AIPD

2023_r1 edition

Application

11708615

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A method of forming a memory device, such as a PCRAM, including selecting a chalcogenide glass backbone material for a resistance variable memory function and devices formed using such a method.

AI hardwareH10N 70/8825H10N 70/041H10N 70/063H10N 70/245H10N 70/826Y10S 438/90

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AI hardware0.79

Machine learning0.01

Natural language0.01

Evolutionary computation0.00

Speech0.00

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Cites (36)

METHODS OF FACTORING AND MODULAR ARITHMETICUS 6,714,954 · 2004 METHODS OF COMPUTING WITH DIGITAL MULTISTATE PHASE CHANGE MATERIALSUS 6,671,710 · 2003 METHOD FOR MAKING SMALL PORE FOR USE IN PROGRAMMABLE RESISTANCE MEMORY ELEMENTUS 6,613,604 · 2003 PROGRAMMABLE MICROELECTRONIC DEVICES AND METHOD OF FORMING AND PROGRAMMING SAMEUS 6,487,106 · 2002 ELECTRICALLY VARIABLE MULTI-STATE RESISTANCE COMPUTINGUS 6,473,332 · 2002 BIASING SCHEME OF FLOATING UNSELECTED WORDLINES AND BITLINES OF A DIODE-BASED MEMORY ARRAYUS 6,462,984 · 2002 PROGRAMMABLE SUB-SURFACE AGGREGATING METALLIZATION STRUCTURE AND METHOD OF MAKING SAMEUS 6,418,049 · 2002 UNIVERSAL MEMORY ELEMENT WITH SYSTEMS EMPLOYING SAME AND APPARATUS AND METHOD FOR READING, WRITING AND PROGRAMMING SAMEUS 6,141,241 · 2000 MEMORY ELEMENT WITH MEMORY MATERIAL COMPRISING PHASE-CHANGE MATERIAL AND DIELECTRIC MATERIALUS 6,087,674 · 2000 MEMORY STRUCTURES AND METHODS OF MAKING SAMEUS 6,072,716 · 2000 MEMORY ELEMENT WITH ENERGY CONTROL MECHANISMUS 5,933,365 · 1999 UNIVERSAL MEMORY ELEMENT AND METHOD OF PROGRAMMING SAMEUS 5,912,839 · 1999 COMPOSITE MEMORY MATERIAL COMPRISING A MIXTURE OF PHASE-CHANGE MEMORY MATERIAL AND DIELECTRIC MATERIALUS 5,825,046 · 1998 PROGRAMMABLE METALLIZATION CELL STRUCTURE AND METHOD OF MAKING SAMEUS 5,761,115 · 1998 SECOND-LAYER PHASE CHANGE MEMORY ARRAY ON TOP OF A LOGIC DEVICEUS 5,714,768 · 1998 INTEGRATED DRIVERS FOR FLAT PANEL DISPLAYS EMPLOYING CHALCOGENIDE LOGIC ELEMENTSUS 5,694,054 · 1997 HOMOGENEOUS COMPOSITIONS OF MICROCRYSTALLINE SEMICONDUCTOR MATERIAL, SEMICONDUCTOR DEVICES AND DIRECTLY OVERWRITABLE MEMORY ELEMENTS FABRICATED THEREFROM, AND ARRAYS FABRICATED FORM THE MEMORY ELEMENTSUS 5,596,522 · 1997 LOGICAL OPERATION CIRCUIT EMPLOYING TWO TERMINAL CHALCOGENIDE SWITCHESUS 5,543,737 · 1996 SWITCHING ELEMENT WITH MEMORY PROVIDED WITH SCHOTTKY TUNNELLING BARRIERUS 5,512,773 · 1996 ELECTRICALLY ERASABLE MEMORY ELEMENTS HAVING IMPROVED SET RESISTANCE STABILITYUS 5,414,271 · 1995 ELECTRICALLY ERASABLE, DIRECTLY OVERWRITABLE, MULTIBIT SINGLE CELL MEMORY ELEMENTS AND ARRAYS FABRICATED THEREFROMUS 5,406,509 · 1995 ELECTRICALLY ERASABLE MEMORY ELEMENTS HAVING REDUCED SWITCHING CURRENT REQUIREMENTS AND INCREASED WRITE/ERASE CYCLE LIFEUS 5,341,328 · 1994 HOMOGENEOUS COMPOSITIONS OF MICROCRYSTALLINE SEMICONDUCTOR MATERIAL, SEMICONDUCTOR DEVICES AND DIRECTLY OVERWRITABLE MEMORY ELEMENTS FABRICATED THEREFROM, AND ARRAYS FABRICATED FROM THE MEMORY ELEMENTSUS 5,335,219 · 1994 ELECTRICALLY REPROGRAMMABLE NONVOLATILE MEMORY DEVICEUS 5,315,131 · 1994 ELECTRICALLY ERASABLE, DIRECTLY OVERWRITABLE, MULTIBIT SINGLE CELL MEMORY ELEMENTS AND ARRAYS FABRICATED THEREFROMUS 5,296,716 · 1994

and 11 more

Cited by (3)

TUNABLE VARIABLE RESISTANCE MEMORY DEVICEUS 9,583,699 · 2017 Tunable Variable Resistance Memory DeviceUS 9,583,703 · 2017 FORCED ION MIGRATION FOR CHALCOGENIDE PHASE CHANGE MEMORY DEVICEUS 8,611,146 · 2013

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