DIFFERENTIAL FLASH MEMORY CELL AND METHOD FOR PROGRAMMING SAME

A flash memory cell. The flash memory cell includes first and second transistors. The first transistor has a control gate coupled to a word line, a drain coupled to a data line and a floating gate. The second transistor, similarly, includes a control gate coupled to the word line, a drain coupled to a second data line and a second floating gate. The first floating gate stores a state of the second transistor prior to programming of the flash memory cell. Further, the second floating gate stores a programmed state of the second transistor. A difference between the states of the first and second transistors represents the value of the data stored in the flash memory cell.