Patent №
US 6,300,652
Granted
2001-10-09
Filed 1996
Owner
SIEMENS AKTIENGESELLSCHAFT
Lab
—
AI components
1
vision
Assignment
Recorded
Dataset
AIPD
2023_r1 edition
Application
08755456
A memory cell configuration and a method for its production include stacked capacitors and use a vertical storage capacitor having a ferroelectric or paraelectric storage dielectric. In order to produce the storage capacitor, a dielectric layer for the storage dielectric is produced over the whole area. The dielectric layer is subsequently structured and first electrodes and second electrodes for the storage capacitors are formed. The invention is suitable for Gbit DRAMs and for nonvolatile memories.
AI classification
Ownership
SIEMENS AKTIENGESELLSCHAFT
assignment · 109540979
Assignors
RISCH, LOTHAR, HOFMANN, FRANZ, BRUCHHAUS, RAINER, WERSING, WOLFRAM
On an employer assignment, the assignors are typically the inventors.