METHOD OF WRITING TO SCALABLE MAGNETORESISTANCE RANDOM ACCESS MEMORY ELEMENT

Patent №

US 6,545,906

Granted

2003-04-08

Filed 2001

Owner

MOTOROLA, INC.

Lab

—

AI components

hardware

Assignment

Recorded

Dataset

AIPD

2023_r1 edition

Application

09978859

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A method to switch a scalable magnetoresistive memory cell including the steps of providing a magnetoresistive memory device sandwiched between a word line and a digit line so that current waveforms can be applied to the word and digit lines at various times to cause a magnetic field flux to rotate the effective magnetic moment vector of the device by approximately 180°. The magnetoresistive memory device includes N ferromagnetic layers that are anti-ferromagnetically coupled. N can be adjusted to change the magnetic switching volume of the device.

AI hardwareG11C 11/16G11C 11/161G11C 11/1675

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Ownership

MOTOROLA, INC.

assignment · 122250989

Assignors

SAVTCHENKO, LEONID, ENGEL, BRADLEY N., RIZZO, NICHOLAS D., DEHERRERA, MARK F., JANESKY, JASON ALLEN, SAVTCHENKO, LEONID, ENGEL, BRADLEY N., RIZZO, NICHOLAS D., DEHERRERA, MARK F., JANESKY, JASON ALLEN

On an employer assignment, the assignors are typically the inventors.

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Cites (2)

MTJ STACKED CELL MEMORY SENSING METHOD AND APPARATUSUS 6,169,689 · 2001 LOW SWITCHING FIELD MAGNETIC TUNNELING JUNCTION FOR HIGH DENSITY ARRAYSUS 5,953,248 · 1999

Cited by (85)

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