ANTIFUSE ADDRESS DETECTING CIRCUIT PROGRAMMABLE BY APPLYING A HIGH VOLTAGE AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE PROVIDED WITH THE SAME

An input protective circuit in a semiconductor integrated circuit device includes a bipolar transistor arranged for an interconnection layer. An N-type active region in the bipolar transistor is connected to an electrode of a program element. The electrode is connected to the interconnection layer. The interconnection layer supplies a high voltage for breaking a dielectric of a program element. A voltage on a P-type well is externally adjusted via a resistance element. Thereby, erroneous program due to serge entering at the interconnection layer can be avoided.