FABRICATION TECHNIQUES FOR ADDRESSING CROSS-POINT DIODE MEMORY ARRAYS

A memory array and some addressing circuitry therefor are formed by creating circuit elements at the crossing-points of two layers of electrode conductors that are separated by a layer of a semiconductor material. The circuit elements formed at the crossing-points function as data storage devices in the memory array, and function as connections for a permuted addressing scheme for addressing the elements in the array. In order to construct the addressing circuitry, the electrode conductors are fabricated with a controlled geometry at selected crossing-points such that selected circuit elements have increased or decreased cross-sectional area. By applying a programming electrical signal to the electrodes, the electrical characteristics (e.g. resistance) of selected circuit elements can be changed according to the controlled electrode geometry.