DRAM MEMORY CAPACITOR HAVING THREE-LAYER DIELECTRIC, AND METHOD FOR ITS PRODUCTION

Patent №

US 6,552,385

Granted

2003-04-22

Filed 2001

Owner

INFINEON TECHNOLOGIES AG

Lab

AI components

1

hardware

Assignment

Recorded

Dataset

AIPD

2023_r1 edition

Application

09756082

A DRAM capacitor is described that contains a BaSrTiO3 (BST) dielectric. The dielectric has a three-layer structure enabling the formation of a potential trough in which electrons can be permanently trapped.

AI hardwareH10D 1/684H10P 14/6329H10P 14/69398

AI classification

AI hardware0.68
Machine learning0.03
Natural language0.00
Vision0.00
Speech0.00
Evolutionary computation0.00
Knowledge representation0.00
Planning0.00

Ownership

INFINEON TECHNOLOGIES AG

assignment · 138180426

Assignors

BEITEL, GERHARD, FRANOSCH, MARTIN, HANEDER, THOMAS PETER, LANGE, GERRIT, REISINGER, HANS, SCHAEFER, HERBERT, SCHLAMMINGER, STEPHAN, WENDT, HERMANN

On an employer assignment, the assignors are typically the inventors.

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