ADIABATIC ROTATIONAL SWITCHING MEMORY ELEMENT INCLUDING A FERROMAGNETIC DECOUPLING LAYER

A magnetoresistive memory element includes a stacked structure with a ferromagnetic reference region including a fixed magnetization; a ferromagnetic free region including a free magnetization that is free to be switched between oppositely aligned directions with respect to an easy axis thereof; and a tunneling barrier made of a non-magnetic material. The ferromagnetic reference and free regions and the tunneling barrier together form a magnetoresistive tunneling junction. The ferromagnetic free region includes a plurality of N ferromagnetic free layers being magnetically coupled such that magnetizations of adjacent ferromagnetic free layers are in antiparallel alignment, where N is an integer greater than or equal to two. The ferromagnetic free region further includes at least one ferromagnetic decoupling layer including frustrated magnetization in orthogonal alignment to ferromagnetic free layer magnetizations and being arranged in between adjacent ferromagnetic free layers.