ADVANCED FINISHING CONTROL

An apparatus and method of using an in situ finishing information for finishing workpieces and semiconductor wafers are described. The method uses operative sensors such as friction sensors for detecting and improving control during finishing. The method can aid control of finishing while using in situ finishing information and cost of manufacture information. The method can aid control of finishing while using organic lubricants, lubricating films, and lubricating boundary layers in the operative finishing interface. The method can generally aid control of differential finishing such as when using differential lubricating films such as lubricating boundary layers. Control can generally aid improvement of differential finishing of workpieces such as semiconductor wafers. Planarization and localized finishing can be used with in situ finishing information such as differential lubricating boundary layer(s) for finishing. Defects can generally be reduced using in situ finishing information such as friction information and/or cost information. In situ improvements to cost of manufacture of a workpiece such as a semiconductor wafer using tracking and using in-process cost of manufacture information and/or cost of manufacture parameters are discussed. In situ improvements to cost of manufacture of a workpiece such as a semiconductor wafer using tracking and using in-process tracked information and/or cost of manufacture parameters are discussed. Methods and apparatus to change and/or improve in situ process control are discussed. Methods and apparatus to change and/or improve real-time process control are discussed. The semiconductor wafers can be tracked individually or by process group such as a process batch. Abrasive finishing surfaces can be used. Tribochemical finishing can generally be improved.