Patent №
US 7,307,872
Granted
2007-12-11
Filed 2005
Owner
HYNIX SEMICONDUCTOR INC.
Lab
—
AI components
1
hardware
Assignment
Recorded
Dataset
AIPD
2023_r1 edition
Application
11296434
A nonvolatile semiconductor memory device obtained by combining a nonvolatile memory device with a SRAM is provided to improve operating speed and reliability. The nonvolatile semiconductor memory device includes a plurality of data registers. Preferably, each of the plurality of data registers includes a pull-up driving unit adapted and configured to pull up a storage node, a pull-down driving unit adapted and configured to pull down the storage node, a data input/output unit adapted and configured to selectively input and output data between a bit line and the storage node depending on a voltage applied to a word line, and a data storing unit adapted and configured to store data of the storage node depending on a voltage applied to a top word line and a bottom word line or to output the stored data to the storage node.
AI classification
Ownership
HYNIX SEMICONDUCTOR INC.
assignment · 173040492
Assignors
KANG, HEE BOK, AHN, JIN HONG
On an employer assignment, the assignors are typically the inventors.