Patent №
US 7,701,746
Granted
2010-04-20
Filed 2007
Owner
SANDISK 3D LLC
Lab
—
AI components
1
hardware
Assignment
Recorded
Dataset
AIPD
2023_r1 edition
Application
11819561
A method of making a two terminal nonvolatile memory cell includes forming a first electrode, forming a charge storage medium, forming a resistive element, and forming a second electrode. The charge storage medium and the resistive element are connected in parallel between the first and the second electrodes, and a presence or absence of charge being stored in the charge storage medium affects a resistivity of the resistive element.
AI classification
AI hardware0.99
Natural language0.00
Knowledge representation0.00
Vision0.00
Evolutionary computation0.00
Machine learning0.00
Speech0.00
Planning0.00
Ownership
SANDISK 3D LLC
assignment · 195360989
Assignors
MEEKS, ALBERT, YANG, XIAOYU, LE, KIM
On an employer assignment, the assignors are typically the inventors.
From the same owner
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