RESISTIVE RANDOM ACCESS MEMORY CONTAINING A STEERING ELEMENT AND A TUNNELING DIELECTRIC ELEMENT
Patent №
US 9,704,920
Granted
2017-07-11
Filed 2015
Owner
SANDISK 3D LLC
Lab
—
AI components
1
hardware
Assignment
Recorded
Dataset
AIPD
2023_r1 edition
Application
14924144
A memory device includes at least one memory cell. The at least one memory cell includes a steering element, a resistive memory element, and a tunneling dielectric element located between the steering element and the resistive memory element.
AI hardwareH10B 63/20H10B 63/845H10N 70/021H10N 70/061H10B 63/34H10N 70/24H10N 70/801H10N 70/823+1 more
AI classification
AI hardware0.96
Knowledge representation0.03
Natural language0.00
Machine learning0.00
Evolutionary computation0.00
Planning0.00
Vision0.00
Speech0.00
Ownership
SANDISK 3D LLC
assignment · 368940292
Assignors
BANDYOPADHYAY, ABHIJIT, NAGAVARAPU, VENKATAGIRISH, LI, XIAO, LAN, ZHIDA, KONEVECKI, MICHAEL
On an employer assignment, the assignors are typically the inventors.
From the same owner
RERAM MIM STRUCTURE FORMATIONUS 10,290,680 · 2019SECURE THRESHOLD DECRYPTION PROTOCOL COMPUTATIONUS 10,050,785 · 2018MEMORY HOLE BIT LINE STRUCTURESUS 9,922,709 · 2018Two Stage Forming of Resistive Random Access Memory CellsUS 9,786,368 · 2017Scan Chain Circuits In Non-Volatile MemoryUS 9,767,905 · 2017MEMORY CELLS INCLUDING VERTICALLY ORIENTED ADJUSTABLE RESISTANCE STRUCTURESUS 9,748,479 · 2017CONTENT ADDRESSABLE MEMORY CELLS AND MEMORY ARRAYSUS 9,711,222 · 2017PARALLEL BIT LINE THREE-DIMENSIONAL RESISTIVE RANDOM ACCESS MEMORYUS 9,698,202 · 2017