CONTENT ADDRESSABLE MEMORY DEVICE HAVING SPIN TORQUE TRANSFER MEMORY CELLS

A CAM device includes an array of CAM cells each having a spin torque transfer (STT) storage cell to store a data bit. Each STT storage cell includes a first magnetic tunnel junction (MTJ) element coupled between a first input node and an output node of the CAM cell, a second MTJ element coupled between a second input node and the output node of the CAM cell, and a first match transistor coupled between the match line and ground potential and having a gate coupled to the output node. The logic state of the data bit is represented by the relative resistances of the first and second MTJ elements.