READ-DISTURBANCE-FREE NONVOLATILE CONTENT ADDRESSABLE MEMORY (CAM)

Patent №

US 9,047,950

Granted

2015-06-02

Filed 2013

Owner

REGENTS OF THE UNIVERSITY OF CALIFORNIA, THE

AI components

1

hardware

Assignment

Recorded

Dataset

AIPD

2023_r1 edition

Application

14014783

Voltage controlled magnetoelectric tunnel junction (MEJ) based content addressable memory is described which provides efficient high speed switching of MEJs toward eliminating any read disturbance of written data. Each cell of said CAM having two MEJs and transistor circuitry for performing a write at voltages of a first polarity, and reads at voltages of a second polarity. If the data searched does not equal the data written in the CAM, then the match line state is changed.

AI hardwareG11C 15/02G11C 11/161G11C 15/046H01F 10/3254H10B 61/22H10N 50/10H10N 50/85G11C 11/5607+2 more

AI classification

AI hardware1.00
Planning0.02
Machine learning0.01
Natural language0.00
Evolutionary computation0.00
Speech0.00
Knowledge representation0.00
Vision0.00

Ownership

REGENTS OF THE UNIVERSITY OF CALIFORNIA, THE

assignment · 313350944

Assignors

AMIRI, PEDRAM KHALILLI, DORRANCE, RICHARD, MARKOVIC, DEJAN, WANG, KANG L.

On an employer assignment, the assignors are typically the inventors.

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