Patent №
US 8,058,643
Granted
2011-11-15
Filed 2007
Owner
THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY
AI components
1
hardware
Assignment
Recorded
Dataset
AIPD
2023_r1 edition
Application
11864426
Non-volatile resistance change memories, systems, arrangements and associated methods are implemented in a variety of embodiments. According to one embodiment, a memory cell having two sections with outwardly-facing portions, the outwardly-facing portions electrically coupled to electrodes is implemented. The memory cell has an ionic barrier between the two sections. The two sections and the ionic barrier facilitate movement of ions from one of the two sections to the other of the two sections in response to a first voltage differential across the outwardly-facing portions. The two sections and the ionic barrier diminish movement of ions from the one of the two sections to the other of the two sections in response to another voltage differential across the outwardly-facing portions.
AI classification
Ownership
THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY
assignment · 202370007
Assignors
MCINTYRE, PAUL C.
On an employer assignment, the assignors are typically the inventors.