NONVOLATILE PROGRAMMABLE RESISTOR MEMORY CELL

Patent №

US 7,569,459

Granted

2009-08-04

Filed 2006

Owner

INTERNATIONAL BUSINESS MACHINES CORPORATION

AI components

1

hardware

Assignment

Recorded

Dataset

AIPD

2023_r1 edition

Application

11427820

A nonvolatile programmable resistance memory cell comprising a high-mobility ion conductor and a method for fabricating the same are provides. The memory cell comprises of a first and second electrode and a reversible and persistent programmable resistance structure connecting the first and second electrode. The resistance is modifiable by altering the ionic distribution of a high-mobility oxygen ion conductor region. As an alternate embodiment, the memory cell further includes a transition-metal oxide region.

AI hardwareH10N 70/24H10N 70/8833H10N 70/8836

AI classification

AI hardware0.78
Planning0.36
Knowledge representation0.00
Machine learning0.00
Natural language0.00
Evolutionary computation0.00
Speech0.00
Vision0.00

Ownership

INTERNATIONAL BUSINESS MACHINES CORPORATION

assignment · 178600031

Assignors

KARG, SIEGFRIED F., MEIJER, GERHARD INGMAR

On an employer assignment, the assignors are typically the inventors.

From the same owner

© 2026 NYSGPT2525 LLC