CHARGE SENSORS USING INVERTED LATERAL BIPOLAR JUNCTION TRANSISTORS

Patent №

US 9,040,929

Granted

2015-05-26

Filed 2012

Owner

INTERNATIONAL BUSINESS MACHINES CORPORATION

AI components

1

hardware

Assignment

Recorded

Dataset

AIPD

2023_r1 edition

Application

13561671

A sensor includes a collector, an emitter and a base-region barrier formed as an inverted bipolar junction transistor having a base substrate forming a base electrode to activate the inverted bipolar junction transistor. A level surface is formed by the collector, the emitter and the base-region barrier opposite the base substrate such that when the level surface is exposed to charge, the charge is measured during operation of the bipolar junction transistor.

AI hardwareG01T 1/247G01N 27/403G01T 3/08H10F 30/245H10F 30/29H10F 30/295H10F 77/14H10F 77/206+2 more

AI classification

AI hardware0.87
Natural language0.01
Machine learning0.00
Evolutionary computation0.00
Knowledge representation0.00
Speech0.00
Planning0.00
Vision0.00

Ownership

INTERNATIONAL BUSINESS MACHINES CORPORATION

assignment · 286760201

Assignors

CAI, JIN, NING, TAK H., YAU, JENG-BANG, ZAFAR, SUFI

On an employer assignment, the assignors are typically the inventors.

From the same owner

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