DOPED SEMICONDUCTOR FILMS AND PROCESSING

Patent №

US 9,099,423

Granted

2015-08-04

Filed 2013

Owner

ASM IP HOLDING B.V.

Lab

AI components

1

ml

Assignment

Recorded

Dataset

AIPD

2023_r1 edition

Application

14143719

A method of forming a semiconductor material incorporating an electrical dopant is disclosed. In one aspect, a method of incorporating dopant in a semiconductor film comprises forming a first semiconductor material incorporating the dopant at a first dopant concentration and preferentially etching a portion of the first semiconductor material, wherein etching leaves a first etched semiconductor material incorporating the dopant at a second dopant concentration higher than the first dopant concentration.

Machine learningH10D 62/60H01L 21/02532H01L 21/02576H01L 21/0262H10P 14/24H10P 14/3411H10P 14/3442H10P 50/642+4 more

AI classification

Machine learning0.75
Evolutionary computation0.00
Planning0.00
AI hardware0.00
Vision0.00
Knowledge representation0.00
Speech0.00
Natural language0.00

Ownership

ASM IP HOLDING B.V.

assignment · 318600338

Assignors

WEEKS, KEITH DORAN, TOLLE, JOHN, GOODMAN, MATTHEW G., MEHTA, SANDEEP

On an employer assignment, the assignors are typically the inventors.

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