DETECTION AND LOCALIZATION OF FAILURES IN 3D NAND FLASH MEMORY

Patent №

US 9,529,663

Granted

2016-12-27

Filed 2015

Owner

APPLE INC.

Lab

AI components

2

planning · evo

Assignment

Recorded

Dataset

AIPD

2023_r1 edition

Application

14975784

A method includes, in a memory block, which includes at least a string of memory cells that is selectable using at least a select transistor, sensing a current flowing through the string. A failure in the memory block, which causes the string to conduct even when unselected using the select transistor, is detected based on the sensed current. A corrective action is initiated in response to the identified failure.

PlanningEvolutionary computationG11C 16/3445G11C 16/349G11C 29/025G11C 29/4401G11C 2029/0409

AI classification

Planning0.56
Evolutionary computation0.56
AI hardware0.06
Knowledge representation0.01
Natural language0.00
Machine learning0.00
Speech0.00
Vision0.00

Ownership

APPLE INC.

assignment · 373350626

Assignors

SRINIVASAN, CHARAN, GURGI, EYAL

On an employer assignment, the assignors are typically the inventors.

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