HETERO-SWITCHING LAYER IN A RRAM DEVICE AND METHOD

A semiconductor device includes first electrodes disposed upon a substrate, wherein each first electrode comprises a metal containing material, switching devices disposed overlying the first electrodes, wherein each switching device comprises a first switching material, a second switching material, and an active metal, wherein the first switching material is disposed overlying and contacting the first electrodes, wherein the second switching material is disposed overlying and contacting the first switching material, wherein the active metal is disposed overlying and contacting the second switching material, wherein the first switching material is characterized by a first switching voltage, wherein the second switching material is characterized by a second switching voltage greater than the first switching voltage; and second electrodes disposed above the switching devices, comprising the metal material, and wherein each of the second electrodes is electrically coupled to the active metal material of the switching devices.