MAGNETIC TUNNEL JUNCTION SWITCHING ASSISTED BY TEMPERATURE-GRADIENT INDUCED SPIN TORQUE

Patent №

US 9,704,551

Granted

2017-07-11

Filed 2015

Owner

INTERNATIONAL BUSINESS MACHINES CORPORATION

AI components

1

hardware

Assignment

Recorded

Dataset

AIPD

2023_r1 edition

Application

14700015

Thermal-spin-torque (TST) in a magnetic tunnel junction (MTJ) is demonstrated by generating large temperature gradients across ultrathin MgO tunnel barriers, with this TST being significant enough to considerably affect the magnitude of the switching field of the MTJ. The origin of the TST is attributed to an asymmetry of the tunneling conductance across the zero-bias voltage of the MTJ. Through magneto-Seebeck voltage measurements, it is estimated that the charge-current that would be generated due to the temperature gradient would give rise to spin-transfer-torque (STT) that is a thousand times too small to account for the observed changes in switching fields, indicating the presence of large TST.

AI hardwareG11C 11/161G11C 11/165G11C 11/1675G11C 19/0808

AI classification

AI hardware0.94
Speech0.00
Machine learning0.00
Natural language0.00
Vision0.00
Evolutionary computation0.00
Knowledge representation0.00
Planning0.00

Ownership

INTERNATIONAL BUSINESS MACHINES CORPORATION

assignment · 355300822

Assignors

PARKIN, STUART S.P., PHUNG, TIMOTHY, PUSHP, AAKASH

On an employer assignment, the assignors are typically the inventors.

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