MAGNETIC TUNNEL JUNCTION SWITCHING ASSISTED BY TEMPERATURE-GRADIENT INDUCED SPIN TORQUE
Patent №
US 9,704,551
Granted
2017-07-11
Filed 2015
Owner
INTERNATIONAL BUSINESS MACHINES CORPORATION
Lab
AI components
1
hardware
Assignment
Recorded
Dataset
AIPD
2023_r1 edition
Application
14700015
Thermal-spin-torque (TST) in a magnetic tunnel junction (MTJ) is demonstrated by generating large temperature gradients across ultrathin MgO tunnel barriers, with this TST being significant enough to considerably affect the magnitude of the switching field of the MTJ. The origin of the TST is attributed to an asymmetry of the tunneling conductance across the zero-bias voltage of the MTJ. Through magneto-Seebeck voltage measurements, it is estimated that the charge-current that would be generated due to the temperature gradient would give rise to spin-transfer-torque (STT) that is a thousand times too small to account for the observed changes in switching fields, indicating the presence of large TST.
AI classification
Ownership
INTERNATIONAL BUSINESS MACHINES CORPORATION
assignment · 355300822
Assignors
PARKIN, STUART S.P., PHUNG, TIMOTHY, PUSHP, AAKASH
On an employer assignment, the assignors are typically the inventors.