SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE FABRICATION METHOD AND ITS FABRICATION APPARATUS

Patent №

US 5,497,331

Granted

1996-03-05

Filed 1994

Owner

HITACHI, LTD.

Lab

AI components

5

ml · kr · planning · evo · hardware

Assignment

Recorded

Dataset

AIPD

2023_r1 edition

Application

08257262

A semiconductor integrated circuit device fabrication technique improves the accuracy of element qualities by considering the influence of interaction of element quality parameters in the quality control of semiconductor fabrication processes and also by improving the product yield estimation accuracy so that the production efficiency can be improved. An initial value of a membership function is first set and then a plurality of element quality parameters and a combined quality parameter are expressed by membership functions in fuzzy control in a semiconductor fabrication apparatus for automating a fabrication method by connecting a computer with various measuring instruments and various processors by communication devices. Moreover, the combined quality parameters are fuzzy-inferred from the element quality parameters using these membership functions, inference rules are adjusted by data of the actual processes, the membership functions of the obtained element quality parameters are converted into an element quality control standard, and the semiconductor integrated circuit device fabrication processes are controlled in accordance with the standard.

AI classification

Planning1.00
Machine learning1.00
AI hardware0.84
Knowledge representation0.68
Evolutionary computation0.58
Vision0.00
Natural language0.00
Speech0.00

Ownership

HITACHI, LTD.

assignment · 70440116

Assignors

IRIKI, NOBUYUKI, OKABE, TSUTOMU, WATANABE, KENJI, MAEJIMA, HISASHI, KUNIYOSHI, SHINJI

On an employer assignment, the assignors are typically the inventors.

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