SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE FABRICATION METHOD AND ITS FABRICATION APPARATUS
Patent №
US 5,497,331
Granted
1996-03-05
Filed 1994
Owner
HITACHI, LTD.
Lab
—
AI components
5
ml · kr · planning · evo · hardware
Assignment
Recorded
Dataset
AIPD
2023_r1 edition
Application
08257262
A semiconductor integrated circuit device fabrication technique improves the accuracy of element qualities by considering the influence of interaction of element quality parameters in the quality control of semiconductor fabrication processes and also by improving the product yield estimation accuracy so that the production efficiency can be improved. An initial value of a membership function is first set and then a plurality of element quality parameters and a combined quality parameter are expressed by membership functions in fuzzy control in a semiconductor fabrication apparatus for automating a fabrication method by connecting a computer with various measuring instruments and various processors by communication devices. Moreover, the combined quality parameters are fuzzy-inferred from the element quality parameters using these membership functions, inference rules are adjusted by data of the actual processes, the membership functions of the obtained element quality parameters are converted into an element quality control standard, and the semiconductor integrated circuit device fabrication processes are controlled in accordance with the standard.
AI classification
Ownership
HITACHI, LTD.
assignment · 70440116
Assignors
IRIKI, NOBUYUKI, OKABE, TSUTOMU, WATANABE, KENJI, MAEJIMA, HISASHI, KUNIYOSHI, SHINJI
On an employer assignment, the assignors are typically the inventors.