SINGLE ENDED TWO-STAGE MEMORY CELL

Patent №

US 6,560,140

Granted

2003-05-06

Filed 2001

Owner

SUN MICROSYSTEMS, INC.

Lab

AI components

1

hardware

Assignment

Recorded

Dataset

AIPD

2023_r1 edition

Application

09852427

The present invention provides a memory array having an array structure that has at least one memory cell, including a word write bit line and a single transfer line. The memory array is also provided with a two-stage memory cell having a speculative storage node, a non-speculative storage node, and a circuit. The two-stage memory cell is electrically coupled to the array structure. Activation of the circuit causes a speculative data value stored in the speculative storage node to be written to the non-speculative storage node.

AI hardwareG11C 15/00G11C 11/005G11C 11/41

AI classification

AI hardware1.00
Machine learning0.03
Natural language0.00
Vision0.00
Knowledge representation0.00
Evolutionary computation0.00
Planning0.00
Speech0.00

Ownership

SUN MICROSYSTEMS, INC.

assignment · 118000493

Assignors

GOLD, SPENCER M., STARAITIS, JULIE

On an employer assignment, the assignors are typically the inventors.

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