CMOS IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME

A CMOS image sensor and a method for fabricating the same are disclosed, in which light-shielding layers are formed in trenches to improve photosensitivity of the image sensor and simplify its process steps. The CMOS image sensor includes a plurality of photodiodes formed in a semiconductor substrate at constant intervals, an interlayer dielectric layer formed on the semiconductor substrate including the photodiodes, a plurality of metal lines formed in the interlayer dielectric layer, a plurality of light-shielding layers formed in the interlayer dielectric layer to correspond to the metal lines, and microlenses formed over the interlayer dielectric layer to correspond to portions between the respective light-shielding layers.