CMOS IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME

A CMOS image sensor and a method for fabricating the same are provided, in which an N type region of a photodiode is prevented from adjoining a device isolation film and a dark current is reduced. The CMOS image sensor includes an interlayer dielectric film formed between a gate poly and a power line, a contact formed in the interlayer dielectric film, and an epitaxial layer connected with the contact and formed only in a blue photodiode region.