RESISTIVE MEMORY ELEMENT AND METHOD OF FABRICATION

Patent №

US 7,741,630

Granted

2010-06-22

Filed 2008

Owner

QIMONDA AG

Lab

AI components

1

hardware

Assignment

Recorded

Dataset

AIPD

2023_r1 edition

Application

12028513

An integrated circuit including a memory cell and a method of manufacturing the integrated circuit are described. The memory cell includes a buried gate select transistor and a resistive memory element coupled to the buried gate select transistor. The resistive memory element stores information based on a resistivity of the resistive memory element.

AI hardwareH10N 70/826H10B 61/00H10B 63/30H10N 70/026H10N 70/063H10N 70/20H10N 70/231H10N 70/245+2 more

AI classification

AI hardware1.00
Machine learning0.01
Natural language0.00
Knowledge representation0.00
Evolutionary computation0.00
Vision0.00
Speech0.00
Planning0.00

Ownership

QIMONDA AG

assignment · 208480176

Assignors

UFERT, KLAUS-DIETER, WILLER, JOSEF

On an employer assignment, the assignors are typically the inventors.

From the same owner

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