SPLIT-LAYER DESIGN FOR DOUBLE PATTERNING LITHOGRAPHY

A mechanism is provided for converting a set of single-layer design rules into a set of split-layer design rules for double patterning lithography (DPL). The set of single-layer design rules and minimum lithographic resolution pitch constraints for single exposure are identified. The set of single-layer design rules comprise a first plurality of minimum distances that are required by a set of first shapes in a single-layer design. Each of the first plurality of minimum distances in the set of single-layer design rules are modified with regard to the minimum lithographic resolution pitch constraints for single exposure, thereby forming the set of split-layer design rules. The set of split-layer design rules comprise a second plurality of minimum distances that are required by a set of second shapes and a set of third shapes in a split-layer design. The set of split-layer design rules are then coded into a design rule checker.