CROSS-COUPLED TRANSISTOR CIRCUIT DEFINED ON THREE GATE ELECTRODE TRACKS WITH DIFFUSION REGIONS OF COMMON NODE ON OPPOSING SIDES OF SAME GATE ELECTRODE TRACK

A first gate level feature forms gate electrodes of a first transistor of a first transistor type and a first transistor of a second transistor type. A second gate level feature forms a gate electrode of a second transistor of the first transistor type. A third gate level feature forms a gate electrode of a second transistor of the second transistor type. The gate electrodes of the second transistors of the first and second transistor types are electrically connected to each other. The gate electrodes of the second transistors of the first and second transistor types are positioned on opposite sides of a gate electrode track along which the gate electrodes of the first transistors of the first and second transistor types are positioned.