Semiconductor Chip Including Region Including Linear-Shaped Conductive Structures Forming Gate Electrodes and Having Electrical Connection Areas Arranged Relative to Inner Region Between Transistors of Different Types and Associated Methods

A first linear-shaped conductive structure (LCS) forms gate electrodes (GE's) of a first transistor of a first transistor type and a first transistor of a second transistor type. A second LCS forms a GE of a second transistor of the first transistor type. A third LCS forms a GE of a second transistor of the second transistor type. A fourth LCS forms a GE of a third transistor of the first transistor type. A fifth LCS forms a GE of a third transistor of the second transistor type. A sixth LCS forms a GE of a fourth transistor of the first transistor type and a fourth transistor of the second transistor type. Transistors of the first transistor type are collectively separated from transistors of the second transistor type by an inner region. The second, third, fourth, and fifth LCS's have respective electrical connection areas arranged relative to the inner region.