Patent №
US 5,872,065
Granted
1999-02-16
Filed 1997
Owner
APPLIED MATERIALS, INC.
Lab
—
AI components
1
vision
Assignment
Recorded
Dataset
AIPD
2023_r1 edition
Application
08825880
An Si--O--F insulating film having a low dielectric constant is deposited on a substrate by thermally reacting disassociated SiF.sub.4 radicals and ozone or oxygen gas in a vacuum chamber. The SiF.sub.4 radicals are formed remotely from the chamber and interact thermally with the ozone or oxygen without requiring plasma enhancement. The deposited Si--O--F film has good gap-filling properties and is suitable for forming IMD layers over high aspect ratio 0.25 micron geometries.
AI classification
Ownership
APPLIED MATERIALS, INC.
assignment · 84800741
Assignors
SIVARAMAKRISHNAN, VISWESWAREN
On an employer assignment, the assignors are typically the inventors.