EPROM IN DOUBLE POLY HIGH DENSITY CMOS

Patent №

US 5,872,034

Granted

1999-02-16

Filed 1997

Owner

DELCO ELECTRONICS CORPORATION

Lab

AI components

1

hardware

Assignment

Recorded

Dataset

AIPD

2023_r1 edition

Application

08963489

A method of making an EPROM transistor in a high density CMOS integrated circuit having a poly to poly capacitor and including two layers of polysilicon. The EPROM transistor is made using only the steps used to make the other components of the high density CMOS integrated circuit. The EPROM transistor is programmable at the low voltages which high density CMOS transistors can handle.

AI hardwareH10B 41/40H10B 41/49H10D 88/00

AI classification

AI hardware0.99
Natural language0.01
Evolutionary computation0.00
Machine learning0.00
Speech0.00
Vision0.00
Knowledge representation0.00
Planning0.00

Ownership

DELCO ELECTRONICS CORPORATION

assignment · 88870561

Assignors

SCHLAIS, JOHN ROBERT, RUSCH, RANDY ALAN

On an employer assignment, the assignors are typically the inventors.

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